Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell

Niane, Djimba and Soce, Mouhamadou M. and Domingo, Jean Jude and Diagne, Ousmane and Dieng, Moustapha (2019) Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell. Applied Physics Research, 11 (1). p. 1. ISSN 1916-9639

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Abstract

In this work, the heterojunction composed of a n-type ZnO transparent conductive oxide (OTC) layer, a n-type CdS buffer layer and a absorber layer based Cu (In, Ga)Se2 p doped is studied under the influence of a KF layer placed in the CIGS/CdS interface. This study was done by varying the thickness of KF using thin-film simulation software named SCAPS-1D. The presence of KF for a doping of the CIGS absorber of 1016cm-3 improves strongly the electrical parameters that are the Vco, the Jcc the FF, the maximum power and the conversion efficiency of the solar cell Ƞ. However, a decrease of the FF and the Jcc is noticed when the thickness of the KF is greater than 30nm causing a deterioration of the performances of the cell.

Item Type: Article
Subjects: European Scholar > Physics and Astronomy
Depositing User: Managing Editor
Date Deposited: 17 Apr 2023 04:44
Last Modified: 07 Feb 2024 04:35
URI: http://article.publish4promo.com/id/eprint/1454

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