Niane, Djimba and Soce, Mouhamadou M. and Domingo, Jean Jude and Diagne, Ousmane and Dieng, Moustapha (2019) Influence of the Thickness of a Layer of Potassium Fluoride Incorporated in the CIGS/CdS Interface on the Macroscopic Electrical Parameters of the Solar Cell. Applied Physics Research, 11 (1). p. 1. ISSN 1916-9639
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Abstract
In this work, the heterojunction composed of a n-type ZnO transparent conductive oxide (OTC) layer, a n-type CdS buffer layer and a absorber layer based Cu (In, Ga)Se2 p doped is studied under the influence of a KF layer placed in the CIGS/CdS interface. This study was done by varying the thickness of KF using thin-film simulation software named SCAPS-1D. The presence of KF for a doping of the CIGS absorber of 1016cm-3 improves strongly the electrical parameters that are the Vco, the Jcc the FF, the maximum power and the conversion efficiency of the solar cell Ƞ. However, a decrease of the FF and the Jcc is noticed when the thickness of the KF is greater than 30nm causing a deterioration of the performances of the cell.
Item Type: | Article |
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Subjects: | European Scholar > Physics and Astronomy |
Depositing User: | Managing Editor |
Date Deposited: | 17 Apr 2023 04:44 |
Last Modified: | 07 Feb 2024 04:35 |
URI: | http://article.publish4promo.com/id/eprint/1454 |